vishay tsop41..st1 document number 82152 rev. 3, 27-mar-03 vishay semiconductors www.vishay.com 1 16656 ir receiver modules for remote control systems \ description the tsop41..st1 - series are miniaturized receivers for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with short burst transmission codes and high data rates. features ? photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field disturbance ttl and cmos compatibility output active low low power consumption high immunity against ambient light special features enhanced data rate of 4000 bit/s operation with short bursts possible ( 6 cycles/burst) block diagram parts table 25 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit part carrier frequency tsop4130st1 30 khz tsop4133st1 33 khz tsop4136st1 36 khz tsop4137st1 36.7 khz tsop4138st1 38 khz tsop4140st1 40 khz tsop4156st1 56 khz
www.vishay.com 2 document number 82152 rev. 3, 27-mar-03 vishay tsop41..st1 vishay semiconductors application circuit absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and optical characteristics t amb = 25 c, unless otherwise specified c 1 = 4.7 f tsopxxxx out gnd circuit c r 1 =100 ? +v s gnd transmitter with tsalxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o the output voltage should not be hold continuously at a voltage below v o = 3.3 v by the external circuit. 16842 parameter te s t c o n d i t i o n symbol va lu e unit supply voltage (pin 3) v s - 0.3 to + 6.0 v supply current (pin 3) i s 5 ma output voltage (pin 1) v o - 0.3 to + 6.0 v output current (pin 1) i o 5 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 10 s, 1 mm from case t sd 260 c parameter test condition symbol min typ. max unit supply current (pin 3) v s = 5 v, e v = 0 i sd 0.8 1.2 1.5 ma v s = 5 v, e v = 40 klx, sunlight i sh 1.5 ma supply voltage (pin 2) v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.3, ir diode tsal6200, i f = 250 ma d 35 m output voltage low (pin 1) i ol = 0.5 ma, e e = 0.7 mw/m 2 , f = f o , test signal see fig. 1 v ol 250 mv irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.2 0.4 mw/m 2
vishay tsop41..st1 document number 82152 rev. 3, 27-mar-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) irradiance (56 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.3 0.5 mw/m 2 irradiance test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg parameter tes t co nd iti on symbol min typ. max unit figure 1. output function figure 2. pulse length and sensitivity in dark ambient e e t t pi *) t v o v oh v ol t po 2) t 14337 optical test signal (ir diode tsal6200, i f =0.4 a, n=6 pulses, f=f 0 , t=10 ms) output signal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi ? 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal function t ? output pulse width ( ms ) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16907 po input burst duration = 950 nm, optical test signal, fig.1 output pulse figure 3. output function figure 4. output pulse diagram e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 ) t ,t ? output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16910 to ff = 950 nm, optical test signal, fig.3 to n on off
www.vishay.com 4 document number 82152 rev. 3, 27-mar-03 vishay tsop41..st1 vishay semiconductors figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient figure 7. sensitivity vs. supply voltage disturbances 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 ? relative frequency 16926 f = f 0 5% f ( 3db ) = f 0 /7 e / e ? rel. responsivity e min e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e ? ambient dc irradiance (w/m 2 ) 16911 correlation with ambient light sources: 10w/m 2 1.4klx (std.illum.a,t=2855k) 10w/m 2 8.2klx (daylight,t=5900k) ambient, = 950 nm e ? threshold irradiance ( mw/m ) e min 2 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms ? ac voltage on dc supply voltage (mv) 16912 f = f o f = 10 khz e ? threshold irradiance ( mw/m ) e min 2 f = 1 khz f = 100 hz figure 8. sensitivity vs. electric field disturbances figure 9. max. envelope duty cycle vs. burstlength figure 10. sensitivity vs. ambient temperature e ? threshold irradiance ( mw/m ) 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e ? field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e min 2 f(e) = f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16914 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ?30?150 153045607590 t amb ? ambient temperature ( q c ) 16918 sensitivity in dark ambient e ? threshold irradiance ( mw/m ) e min 2
vishay tsop41..st1 document number 82152 rev. 3, 27-mar-03 vishay semiconductors www.vishay.com 5 figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 850 950 1050 1150 ? wavelength ( nm ) 16919 s ( ) ? relative spectral sensitivity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 d rel C relative transmission distance
www.vishay.com 6 document number 82152 rev. 3, 27-mar-03 vishay tsop41..st1 vishay semiconductors suitable data format the circuit of the tsop41..st1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal should fulfill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 6 cycles/burst or longer. after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should have at least same length as the burst. up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r-2000 code, recs-80 code. when a disturbance signal is applied to the tsop41..st1 it can still receive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occure. some examples for such disturbance signals which are suppressed by the tsop41..st1 are: &bulllet; dc light (e.g. from tungsten bulb or sunlight) &bulllet; continuous signal at 38 khz or at any other frequency &bulllet; signals from fluorescent lamps with elec- tronic ballast (an example of the signal modulation is in the figure below). figure 13. ir signal from fluorescent lamp with low modulation 0 5 10 15 20 time ( ms ) 16920 ir signal ir signal from fluorescent lamp with low modulation
vishay tsop41..st1 document number 82152 rev. 3, 27-mar-03 vishay semiconductors www.vishay.com 7 package dimensions in mm 16793
www.vishay.com 8 document number 82152 rev. 3, 27-mar-03 vishay tsop41..st1 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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